ISO/AWI 5618-2.2

Fine ceramics (advanced ceramics, advanced technical ceramics) --Test method for GaN crystal surface defects — Part 2: Method of determining the etch pit density

Scope

This document describes the method of determining the etch pit density, which is used to detect the dislocations and processing-introduced defects that occur on single-crystal GaN substrates or single-crystal GaN films.
It is applicable to the defects specified in AWI 5618-1 from among the defects cropped out on the surface of the following types of GaN substrates or films: single-crystal GaN substrate; single-crystal GaN film formed by homoepitaxial growth on a single-crystal GaN substrate; or single-crystal GaN film formed by heteroepitaxial growth on a single-crystal Al2O3, SiC, or Si substrate.

It is applicable to defects with an etch pit density of 7 × 107 cm-2 or lower.